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inchange semiconductor product specification silicon npn power transistors 2SD1585 description ? ? with to-220fa package ?v ceo ?y 60v;v ebo ?y 7v;i c(dc) ?3.0a ? complement to type 2sb1094 applications ? for use in audio frequency power amplifier and general purpose applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 60 v v ceo collector -emitter voltage open base 60 v v ebo emitter-base voltage open collector 7 v i c collector current 3 a i cm collector current-peak 5 a i b base current 0.6 a t a =25 ?? 2.0 p c collector power dissipation t c =25 ?? 15 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-220fa) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SD1585 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =30ma; i b =0 60 v v cesat collector-emitter saturation voltage i c =2a; i b =0.2a 1.5 v v besat base-emitter saturation voltage i c =2a ;i b =0.2a 2.0 v i cbo collector cut-off current v cb =60v; i e =0 10 | a i ebo emitter cut-off current v eb =7v; i c =0 10 | a h fe-1 dc current gain i c =50ma ; v ce =5v 20 h fe-2 dc current gain i c =0.5a ; v ce =5v 40 200 f t transition frequency i c =0.1a; v ce =5v 16 mhz c ob collector output capacitance f=1mhz ; v cb =10v 48 pf ? h fe-2 classifications m l k 40-80 60-120 100-200
inchange semiconductor product specification 3 silicon npn power transistors 2SD1585 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.15 mm)

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